发布于 2026-10-28
英文原文
电源设计工程师
Senior Principal Engineer
ルネサス エレクトロニクス
| 职种 | 工程 | 雇用形态 | — |
|---|---|---|---|
| 工作地点 | San Jose, CALIFORNIA, us | 薪资 | 面议 |
职位概要
该职位招聘电源设计工程师,负责主导高电流BCD(双极-CMOS-DMOS)及低压GaN功率工艺与产品组合的测试载具(TV)开发。工作涵盖从概念到硅片点亮的测试载具定义、电路与版图设计及特性化规划,需与工艺开发、产品工程及应用团队紧密协作。主要职责包括:定义并设计高电流BCD和低压GaN工艺的测试载具,含器件测试结构、缩放功率级及全功能演示电路;将工艺能力目标与产品路线图需求转化为测试载具架构与规格;设计与仿真功率级电路(如同步降压/升压、多相、半桥/DrMOS、栅极驱动器);选型与特性化功率器件(LDMOS、沟槽MOSFET、低压GaN HEMT、肖特基/同步整流器);进行IC级版图设计,考虑开关节点、电流检测与栅极驱动路径的寄生效应;按需扩展至模块/封装级协同设计;制定DC参数、开关性能、效率、瞬态响应及电压/电流应力裕度等测试与特性化计划;主导或支持硅片点亮、调试及仿真与实测结果的相关性分析;跨职能协作并记录设计方法与测试数据。要求电气工程、微电子或相关专业学士或硕士,10年以上功率半导体器件、模拟/电源IC或电力电子设计经验;精通功率转换拓扑及其对器件需求的驱动;深入理解BCD工艺与GaN器件物理及权衡(RDS(ON)、开关损耗、栅极电荷、击穿/雪崩行为、热特性);具备工艺技术开发用测试结构/测试芯片设计经验;具备IC级设计与版图经验;有将设计延伸至模块、封装或板级经验;熟练使用SPICE等电路仿真工具;能解读绝对最大额定值及保护阈值;具备扎实的实验室调试与特性化技能。Renesas提供具有竞争力的薪酬福利,倡导TAGIE文化(透明、敏捷、全球、创新、创业),是平等机会雇主。
职位描述
Job Description We are seeking a Power Design Engineer to lead the development of test vehicles supporting our high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. This role owns test vehicle definition, circuit and layout design, and characterization planning from concept through silicon bring-up, working closely with process development, product engineering, and applications teams. The ideal candidate has hands-on experience designing power devices and circuits at both the IC and module level, and is fluent in the power topologies these test vehicles are ultimately intended to support. Key Responsibilities Define, design, and drive execution of test vehicles (TVs) for high-current BCD and LV GaN process technologies, including device test structures, scaled power stages, and full-function demonstration circuits. Translate process capability targets and product roadmap requirements into test vehicle architecture and specifications. Design and simulate power stage circuits (e.g., synchronous buck/boost, multiphase, half-bridge/DrMOS, gate drivers) used to validate device performance under realistic switching and thermal conditions. Select and characterize power devices (LDMOS, trench MOSFETs, LV GaN HEMTs, Schottky/sync rectifiers) for inclusion in test structures, working with device/process engineering on layout-dependent tradeoffs (RDS(ON), Qg, breakdown voltage, SOA). Perform IC-level layout and design for test structures, including parasitic-aware layout for switch nodes, current sensing, and gate drive paths. Extend designs to module/package level as needed — co-design of power stages with packaging, magnetics, and PCB layout for evaluation boards and system-level test vehicles. Develop test and characterization plans covering DC parametrics, switching performance, efficiency, transient response, and voltage/current stress margins (including switch-node ringing and abs-max validation). Lead or support silicon bring-up, debug, and correlation of measured results against simulation and design targets. Collaborate cross-functionally with process integration, reliability, product/applications engineering, and test engineering to close the loop from process split data to product-ready specifications. Document design methodology, test vehicle results, and characterization data to support technology qualification and product development decisions. Qualifications Bachelor's or Master's degree in Electrical Engineering, Microelectronics, or related field. 10+ years of hands-on design experience in power semiconductor devices, analog/power ICs, or power electronics. Strong working knowledge of power conversion topologies (e.g., buck, boost, multiphase/interleaved converters, half-bridge, DrMOS/Intelli-Phase-style architectures) and how topology choices drive device requirements. Solid understanding of power device physics and tradeoffs across BCD process technologies and GaN (particularly low-voltage GaN HEMTs) — including RDS(ON), switching loss, gate charge, breakdown/avalanche behavior, and thermal characteristics. Demonstrated experience designing test structures or test chips/vehicles for process technology development (not just product design) — comfortable defining what a process node needs to prove out. IC-level design and layout experience, including parasitic-sensitive layout practices for high-current switching nodes. Experience taking designs beyond the die level to module, package, or board level (e.g., power module co-design, evaluation board layout, thermal/electrical co-design). Proficiency with circuit simulation tools (SPICE or equivalent) and familiarity with device/TCAD simulation concepts. Ability to interpret and specify absolute maximum ratings, transient voltage tolerance, and protection thresholds (OVP/UVP/OCP/OTP) relevant to power stage reliability. Strong lab skills: bring-up, debug, and characterization using oscilloscopes, curve tracers, power analyzers, and thermal imaging. Additional Information Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier . With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future. At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives. We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process. Are you ready to join our team and shape the future with us? Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement . Renesas Electronics deals with dual-use technology that is subject to U.S. export controls regulations. Under these regulations it may be necessary for Renesas to obtain U.S. government export license prior to release of technology to certain persons. The decision whether or not to file or pursue an export license application is at the sole discretion of Renesas.