发布于 2026-07-30
英文原文
中压(MV)功率沟槽MOSFET团队工程师
Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer
ルネサス エレクトロニクス
| 职种 | 工程 | 雇用形态 | — |
|---|---|---|---|
| 工作地点 | Kumamoto, Kumamoto, jp | 薪资 | 面议 |
职位概要
该职位隶属于中压(MV)功率沟槽MOSFET团队,负责下一代MV屏蔽栅沟槽MOSFET技术的设计与开发。主要职责包括:定义并建立下一代MV屏蔽栅沟槽MOSFET技术的关键工艺模块;搭建开发所需的关键工艺模块;进行晶圆探测并分析各开发周期组装产品的性能数据;分析晶圆级电学测试结果与封装级性能数据;基于成熟技术平台支持衍生技术开发;主导良率提升活动并支持技术向量产转移;参与基于成熟平台的衍生产品开发。应聘资格:电气工程、物理或相关领域博士(优先)或硕士;最多15年功率半导体器件或工艺开发经验,最好专注于硅基MV屏蔽栅沟槽MOSFET;扎实理解功率器件物理与半导体制造工艺;具备TCAD工具和基于仿真的器件分析实操经验;英语和日语读写及口语达到中级水平。Renesas为员工提供具有竞争力的薪酬与福利,具体信息将在招聘流程中提供。
职位描述
Job Description We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team . The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization. Key Responsibilities: Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology Set up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologies Perform wafer probing and analyze assembled product performance data for each development cycle Analyze wafer-level electrical test results and package-level performance data for each development iteration Support derivative technology development based on proven technology platforms Lead yield improvement activities and support technology transfer to mass production Contribute to the development of derivative products based on established and mature technology platforms Qualifications Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs Solid understanding of power device physics and semiconductor fabrication processes Hands-on experience with TCAD tools and simulation-based device analysis Intermediate-level proficiency in both written and spoken English and Japanese Additional Information Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier . With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future. At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives. We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process. Are you ready to join our team and shape the future with us? Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement .