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发布于 2026-10-15 英文原文

GaN技术开发工程师

GaN Technology Development Engineer

ルネサス エレクトロニクス

职种工程 雇用形态—
工作地点Hitachinaka, Ibaraki, jp 薪资面议

职位概要

招聘GaN技术开发工程师,负责面向新兴应用的新一代高效功率转换技术。参与从器件概念与架构开发到技术认证和产品发布的完整技术与产品开发周期。负责开发先进GaN器件结构,通过电学表征和数据驱动分析推动技术开发。主要工作包括晶体管几何设计、工艺集成、通过数据分析排查工艺与器件问题,以及执行电学测试以调试和解决技术难题。还将研究新的表征方法以探究器件动态行为。理想候选人需结合器件物理知识与实验室测试环境及实际问题解决能力。需协调TCAD仿真、工艺开发、可靠性测试和产品工程等多个职能团队,加速学习周期并推进技术成熟以支持大规模量产。核心职责包括:(1)器件与PCM测试结构设计;(2)工艺集成;(3)动手进行器件表征与测试以进行技术故障排查。该职位曝光度高,有机会做出重要技术和业务贡献,并帮助塑造GaN功率半导体创新的未来。要求:电气工程、半导体物理/工程或相关技术领域学士以上学位,3-7年半导体器件开发、表征或技术工程经验;理解半导体器件物理;具有功率器件或SiC或GaN相关技术开发经验;具备电学表征和器件测试的实操经验;具备与全球团队进行技术讨论的英语沟通能力。加分项:较强的问题解决能力及独立推动技术调查的能力;了解器件可靠性、退化机制和认证标准;熟悉半导体测试设备,如参数分析仪、SMU/CMU、曲线追踪仪、示波器、脉冲发生器、探针台;使用Python、JMP或类似统计工具分析电学数据。

职位描述

Job Description We are seeking GaN Technology Development Engineer to drive next-generation high-efficiency power conversion technologies for emerging applications. In this role, you will participate throughout the full technology and product development cycle, from device concept and architecture development through technology qualification and product launch. Responsible for developing advanced GaN device structures and driving technology development through electrical characterization and data-driven analysis. A major focus will be the technology development including, transistor geometry design, process integration, troubleshooting for process and device-related issues through data analysis, and performing electrical testing to debug and resolve technical challenges. You will also work on new characterization methodologies to investigate device dynamic behavior. The ideal candidate combines device physics knowledge with laboratory testing environment, practical problem-solving skills. Coordinating works across multiple functional teams, including TCAD simulation, process development, reliability test, and product engineering, you will accelerate learning cycles and advance technology readiness for high-volume manufacturing. A key responsibility of this role is to serve as a technical contributor in (1) Device & PCM test structure design (2) Process Integration (3) hand-on device characterization and testing for technical trouble shooting. This is a high-visibility position offering the opportunity to make significant technical and business contributions while helping shape the future of GaN power semiconductor innovation Qualifications [Must] · B.S. above in Electrical Engineering, Semiconductor Physics/Engineering, or a related technical field w.i 3-7 years of experience in semiconductor device development, characterization, or technology engineering. · Understanding of semiconductor device physics. Experience with power device or SiC or GaN related technology development. · Hands-on experience in electrical characterization and device testing. · English communication skills for technical topic discussion with global teams [Good to have] · Strong problem-solving skills and the ability to independently drive technical investigations. · Understanding of device reliability, degradation mechanisms, and qualification standard. · Similar with semiconductor test equipment, such as parameter analyzers, SMUs/CMUs, curve tracers, oscilloscopes, pulse generators, probe stations. · Analyzing electrical data using Python, JMP, or similar statistical tools. Additional Information ルネサスは、「To Make Our Lives Easier(人々の暮らしをより豊かで快適にする)」というPurposeのもと、組込み半導体ソリューションを提供するグローバル企業です。世界30か国以上で活躍する21,000人を超えるエンジニアや課題解決のプロフェッショナルとともに、自動車、産業、インフラ、IoT分野における世界最先端のテクノロジー開発に携わり、より安全で、健康的で、環境にやさしく、スマートな未来の実現に貢献しています。 ルネサスでは、「TAGIE(Transparent、Agile、Global、Innovative、Entrepreneurial)」を企業文化の中核としています。TAGIEは、私たちの働き方や成長のあり方、そしてPurposeの実現に向けた取り組みを支える共通の価値観です。この協調的な精神と挑戦するマインドセットが、半導体技術を通じた産業の変革と、世界中の人々の暮らしへの貢献を可能にしています。 私たちは、競争力のある報酬制度に加え、充実した福利厚生をご用意しています。福利厚生の詳細については、選考プロセスの中でご案内いたします。 私たちとともに未来を創造する挑戦に、ぜひ参加しませんか。皆さまからのご応募をお待ちしております。